PART |
Description |
Maker |
EIA1718A-2P |
17.3-18.1GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited Seme LAB
|
D2218UK |
CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) Seme LAB
|
D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的,推挽式)(镀金多用的DMOS射频硅场效应管(50 28V 1GHz的,推挽式) METAL GATE RF SILICON FET
|
3M Company SEME-LAB[Seme LAB]
|
CVCSO-914-1000 |
Ultra-Low Phase Noise 1GHz SAW VCSO Ultra-Low Phase Noise 1GHz SAW VCSO
|
Crystek Corporation
|
MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier From old datasheet system Internally Compensated / High Performance Operational Amplifier Internally Compensated, High Performance Operational Amplifier OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
KH104 |
DC to 1.1GHz Linear Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
TSH690 TSH690ID |
40MHz to 1GHz AMPLIFIER
|
STMicroelectronics
|
SP4633 |
1GHz 64 NON SELF OSCILLATING PRESCALER
|
Zarlink Semiconductor Inc.
|
MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|